Mask and method of manufacturing the same

ABSTRACT

A mask and a method of manufacturing the same are disclosed. The method of manufacturing a mask includes forming a conductive layer on a pattern region and an auxiliary region around the pattern region of a substrate, placing the substrate including the conductive layer in a plating bath, forming a plating layer on the conductive layer, and separating the substrate and the conductive layer from the plating layer.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims the benefit and priority to Korean PatentApplication No. 10-2018-0173975, filed on Dec. 31, 2018, the entirety ofwhich is hereby incorporated by reference.

BACKGROUND Technical Field

The present disclosure relates to a mask and a method of manufacturingthe same.

Description of the Related Art

Among display apparatuses, electroluminescent display apparatuses areself-emitting display apparatuses and have excellent viewing angle andcontrast ratio. Since the electroluminescent display apparatuses do notneed a separate backlight, they can be made lighter and thinner withexcellent power consumption. For example, an organic light emittingdisplay apparatus among the electroluminescent display apparatuses isdriven with a low direct current (DC) voltage, has a fast response time,and is low in manufacturing cost.

The electroluminescent display apparatus may include a plurality ofelectroluminescent diodes. The electroluminescent diode may include ananode electrode, an emission layer formed on the anode electrode, and acathode electrode formed on the emission layer. When a high-potentialvoltage and a low-potential voltage are applied to the anode electrodeand the cathode electrode, respectively, each of a hole from the anodeelectrode and an electron from the cathode electrode is transported intothe emission layer. When the hole and the electron are combined in theemission layer, an exciton is generated during excitation and light isgenerated with energy from the exciton. The electroluminescent displayapparatus can display images by electrically controlling the amount oflight generated from emission layers of the plurality ofelectroluminescent diodes.

The electroluminescent display apparatus may include a light emittingelement including red, green, and blue emission layers to display afull-color image. An organic layer of the electroluminescent displayapparatus may have a patterned emission layer structure. In theelectroluminescent display apparatus having the patterned emission layerstructure, emission layers emitting light of different colors areseparated for respective pixels.

For example, a red organic emission layer for emitting red light, agreen organic emission layer for emitting green light, and a blueorganic emission layer for emitting blue light may be separated in a redsub-pixel, a green sub-pixel, and a blue sub-pixel, respectively. Theorganic emission layers may be deposited and patterned on emissionregions of the respective sub-pixels using a mask, e.g., a fine metalmask (FMM), having openings for the respective sub-pixels.

BRIEF SUMMARY

Such a mask has been typically manufactured by forming a pattern throughan exposure and development process and then transferring the pattern ona metal sheet through wet-etching. However, when the mask ismanufactured using the wet-etching process, it is difficult to preciselycontrol the pattern width during the etching process due to the isotropyof etching. Therefore, it is difficult to obtain a high-resolutionpattern.

Accordingly, the inventor of the present disclosure developed a processfor manufacturing a mask, e.g., FMM, for use in a manufacturing processof the electroluminescent display apparatus by electroplating. In theelectroplating process, a plating layer is formed on a seed patterndisposed on a substrate by applying a current to the seed pattern.

The inventor of the present disclosure recognized that the maskmanufactured by electroplating has a difference in thickness of theplating layer depending on the position of the seed pattern due to adifference in current density or the like.

Accordingly, the inventor of the present disclosure invented a mask inwhich the thickness of a plating layer may be maintained uniformlyaccording to the position of a conductive layer which is the seedpattern, through various experiments.

An object of the present disclosure is to provide a mask in which thethickness of a plating layer may be uniformly maintained by uniformlymaintaining the thickness of a conductive layer as a seed pattern.

Additional features and aspects will be set forth in the descriptionthat follows, and in part will be apparent from the description, or maybe learned by practice of the inventive concepts provided herein. Otherfeatures and aspects of the inventive concepts may be realized andattained by the structure particularly pointed out in the writtendescription, or derivable therefrom, and the claims hereof as well asthe appended drawings.

To achieve these and other aspects of the inventive concepts as embodiedand broadly described, there is provided a method of manufacturing amask including forming a conductive layer on a pattern region and anauxiliary region around the pattern region of a substrate. The methodfurther includes placing the substrate including the conductive layer ina plating bath. The method also includes forming a plating layer on theconductive layer and separating the substrate and the conductive layerfrom the plating layer.

In another aspect, there is provided a mask including a pattern regionin a plurality of cell regions, the pattern region having a firstplating layer. The mask further includes an auxiliary region configuredto be around the pattern region, the auxiliary region having a secondplating layer.

In another aspect, a mask includes a substrate including a plurality ofcell regions. The mask further includes a first plating layer in theplurality of cell regions and a second plating layer in an outerperiphery of the plurality of cell regions. The mask also includes athird plating layer between the plurality of cell regions. One of thesecond plating layer and the third plating layer may have the samethickness as the first plating layer.

According to an embodiment of the present disclosure, the uniformity inthickness of a plating layer on a conductive layer may be improved byuniformly forming the thickness of the conductive layer.

According to an embodiment of the present disclosure, the uniformity inthickness of a plating layer according to the position of a patternregion may be improved by forming an auxiliary region.

According to an embodiment of the present disclosure, the uniformity inthickness of a plating layer according to the position of a cathode maybe improved by forming an auxiliary region including a conductive layerhaving different widths.

Other systems, methods, features and advantages will be, or will become,apparent to one with skill in the art upon examination of the followingfigures and detailed description. It is intended that all suchadditional systems, methods, features and advantages be included withinthis description, be within the scope of the present disclosure, and beprotected by the following claims. Nothing in this section should betaken as a limitation on those claims. Further aspects and advantagesare discussed below in conjunction with embodiments of the disclosure.It is to be understood that both the foregoing general description andthe following detailed description of the present disclosure areexamples and explanatory, and are intended to provide furtherexplanation of the disclosure as claimed.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The accompanying drawings, that may be included to provide a furtherunderstanding of the disclosure and are incorporated in and constitute apart of this specification, illustrate embodiments of the disclosure andtogether with the description serve to explain various principles of thedisclosure.

FIG. 1A through FIG. 1D are plan views and cross-sectional views for amethod of manufacturing a mask according to an embodiment of the presentdisclosure.

FIG. 2 illustrates an electroplating apparatus according to anembodiment of the present disclosure.

FIG. 3A through FIG. 3C are provided to explain a difference inthickness of a plating layer according to an embodiment of the presentdisclosure.

FIG. 4 is a graph showing the measured thickness of a plating layeraccording to an embodiment of the present disclosure.

FIG. 5A through FIG. 5C illustrate a mask according to anotherembodiment of the present disclosure.

FIG. 6A through FIG. 6F illustrate a process for forming an auxiliaryregion according to another embodiment of the present disclosure.

FIG. 7A through FIG. 7D are plan views and cross-sectional views for amethod of manufacturing a mask according to another embodiment of thepresent disclosure.

FIG. 8A and FIG. 8B show the measured thickness of a plating layeraccording to another embodiment of the present disclosure.

FIG. 9A and FIG. 9B show the measured thickness of a plating layeraccording to another embodiment of the present disclosure.

FIG. 10 is a flowchart for manufacturing a mask according to anotherembodiment of the present disclosure.

FIG. 11A through FIG. 11D illustrate a method of manufacturing a maskaccording to another embodiment of the present disclosure.

FIG. 12 illustrates a chamber where an organic material is sputtered ona display panel using the mask shown in FIG. 7C.

Throughout the drawings and the detailed description, unless otherwisedescribed, the same drawing reference numerals should be understood torefer to the same elements, features, and structures. The relative sizeand depiction of these elements may be exaggerated for clarity,illustration, and convenience.

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments of the presentdisclosure, examples of which may be illustrated in the accompanyingdrawings. In the following description, when a detailed description ofwell-known functions or configurations related to this document isdetermined to unnecessarily cloud a gist of the inventive concept, thedetailed description thereof will be omitted. The progression ofprocessing steps and/or operations described is an example; however, thesequence of steps and/or operations is not limited to that set forthherein and may be changed as is known in the art, with the exception ofsteps and/or operations necessarily occurring in a particular order.Like reference numerals designate like elements throughout. Names of therespective elements used in the following explanations are selected onlyfor convenience of writing the specification and may be thus differentfrom those used in actual products. Reference will now be made in detailto embodiments of the present disclosure, examples of which may beillustrated in the accompanying drawings. In the following description,when a detailed description of well-known functions or configurationsrelated to this document is determined to unnecessarily cloud a gist ofthe inventive concept, the detailed description thereof will be omitted.The progression of processing steps and/or operations described is anexample; however, the sequence of steps and/or operations is not limitedto that set forth herein and may be changed as is known in the art, withthe exception of steps and/or operations necessarily occurring in aparticular order. Like reference numerals designate like elementsthroughout. Names of the respective elements used in the followingexplanations are selected only for convenience of writing thespecification and may be thus different from those used in actualproducts.

A shape, a size, a ratio, an angle, and a number disclosed in thedrawings for describing embodiments of the present disclosure are merelyan example. Thus, the present disclosure is not limited to theillustrated details. Unless otherwise described, like reference numeralsrefer to like elements throughout. In the following description, whenthe detailed description of the relevant known function or configurationis determined to unnecessarily obscure an important point of the presentdisclosure, the detailed description of such known function orconfiguration may be omitted. In a case where terms “comprise,” “have,”and “include” described in the present specification are used, anotherpart may be added unless a more limiting term, such as “only,” is used.The terms of a singular form may include plural forms unless referred tothe contrary.

In construing an element, the element is construed as including an erroror tolerance range even where no explicit description of such an erroror tolerance range.

In describing a position relationship, when a position relation betweentwo parts is described as, for example, “on,” “over,” “under,” or“next,” one or more other parts may be disposed between the two partsunless a more limiting term, such as “just” or “direct(ly),” is used.

In describing a time relationship, when the temporal order is describedas, for example, “after,” “subsequent,” “next,” or “before,” a casewhich is not continuous may be included unless a more limiting term,such as “just,” “immediate(ly),” or “direct(ly),” is used.

In describing elements of the present disclosure, the terms like“first,” “second,” “A,” “B,” “(a),” and “(b)” may be used. These termsare merely for differentiating one element from another element, and theessence, sequence, order, or number of a corresponding element shouldnot be limited by the terms. Also, when an element or layer is describedas being “connected,” “coupled,” or “adhered” to another element orlayer, the element or layer can not only be directly connected oradhered to that other element or layer, but also be indirectly connectedor adhered to the other element or layer with one or more interveningelements or layers “disposed” between the elements or layers, unlessotherwise specified.

The term “at least one” should be understood as including any and allcombinations of one or more of the associated listed items. For example,the meaning of “at least one of a first item, a second item, and a thirditem” encompasses the combination of all items proposed from two or moreof the first item, the second item, and the third item as well as thefirst item, the second item, or the third item.

It will be understood that, although the terms “first,” “second,” etc.,may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are only used to distinguishone element from another. For example, a first element could be termed asecond element, and, similarly, a second element could be termed a firstelement, without departing from the scope of the present disclosure.

The term “at least one” should be understood as including any and allcombinations of one or more of the associated listed items. For example,the meaning of “at least one of a first item, a second item, and a thirditem” denotes the combination of all items proposed from two or more ofthe first item, the second item, and the third item as well as the firstitem, the second item, or the third item.

In the description of embodiments, when a structure is described asbeing positioned “on or above” or “under or below” another structure,this description should be construed as including a case in which thestructures contact each other as well as a case in which a thirdstructure is disposed therebetween. The size and thickness of eachelement shown in the drawings are given merely for the convenience ofdescription, and embodiments of the present disclosure are not limitedthereto.

Features of various embodiments of the present disclosure may bepartially or overall coupled to or combined with each other, and may bevariously inter-operated with each other and driven technically as thoseskilled in the art can sufficiently understand. Embodiments of thepresent disclosure may be carried out independently from each other, ormay be carried out together in co-dependent relationship.

Hereinafter, a mask and a method of manufacturing of the mask accordingto an embodiment of the present disclosure will be described in detailwith reference to accompanying drawings. In adding reference numerals toelements of each of the drawings, although the same elements areillustrated in other drawings, like reference numerals may refer to likeelements.

FIG. 1A through FIG. 1D are plan views and cross-sectional views for amethod of manufacturing a mask according to an embodiment of the presentdisclosure.

A plating layer may be formed by electroplating and chemical plating. Inthe electroplating method, a substrate is immersed in a plating bathwhere a plating solution is stored and a current is allowed to flow toplate a partial region or entire region of the substrate. In thechemical plating, a substrate is immersed in a plating bath to plate asurface of the substrate.

Further, the electroplating method includes a vertical electroplatingmethod and a horizontal electroplating method. In the verticalelectroplating method, plating is performed in a state where thesubstrate is disposed vertically in the plating bath. In the horizontalelectroplating method, plating is performed in a state where thesubstrate is disposed horizontally in the plating bath. Herein, theelectroplating method will be described as an example, but the presentdisclosure is not limited thereto.

With reference to FIG. 1A and FIG. 1B, a first conductive layer 122having a mesh shape is formed in a plurality of cell regions CELL on asubstrate 110. Further, a second conductive layer 124 is formed tosurround an outer periphery of the plurality of cell regions CELL.

The substrate 110 may be a substrate to support components formed on thesubstrate 110. The substrate 110 may be formed of an insulating materialto suppress the application of a current to the substrate 110. Theplurality of cell regions CELL corresponding to a plurality ofelectroluminescent display apparatuses may be disposed on the substrate110. Each of the plurality of cell regions CELL includes a plurality ofopenings 150 corresponding to a plurality of pixels of anelectroluminescent display apparatus.

The first conductive layer 122 and the second conductive layer 124 maybe disposed on the substrate 110. The first conductive layer 122 and thesecond conductive layer 124 may be seed layers in a plating process tobe performed later.

The first conductive layer 122 may define the plurality of openings 150in the plurality of cell regions CELL. The second conductive layer 124may be disposed to surround the outer periphery of the plurality of cellregions CELL. For example, the second conductive layer 124 may be aregion where metal is formed in the entire region of the substrate 110and may be referred to as an entire metal region. For example, the firstconductive layer 122 may be a region where metal is formed in a patternregion and may be referred to as a pattern region or patterned metalregion.

With reference to FIG. 1C and FIG. 1D, a first plating layer 142 and asecond plating layer 144 may be formed by performing a plating processusing the first conductive layer 122 and the second conductive layer 124as seed layers.

The plating process for forming the first plating layer 142 and thesecond plating layer 144 on the first conductive layer 122 and thesecond conductive layer 124 is performed. Any plating method can beemployed freely according to a design as long as it can form the firstplating layer 142 and the second plating layer 144 formed of a metalmaterial. In the method of manufacturing a mask according to anembodiment of the present disclosure, an electroplating method which isa wet plating method may be employed. In the plating process using theelectroplating method, a current is applied to the first conductivelayer 122 and the second conductive layer 124 that may be as seedlayers. When a current flows in the first conductive layer 122 and thesecond conductive layer 124, the first plating layer 142 and the secondplating layer 144 may be formed on the surfaces of the first conductivelayer 122 and the second conductive layer 124, respectively. Therefore,the first plating layer 142 may be disposed on the first conductivelayer 122 and the second plating layer 144 may be disposed on the secondconductive layer 124.

Then, the substrate 110, the first conductive layer 122, and the secondconductive layer 124 are separated from the first plating layer 142 andthe second plating layer 144. For example, the first plating layer 142and the second plating layer 144 may be separated from the substrate110, the first conductive layer 122, and the second conductive layer124.

As described above with reference to FIG. 1A through FIG. 1D, a maskincluding the plating layer can be manufactured through the platingprocess. However, the inventor of the present disclosure recognized thatthe thickness of the plating layer is changed due to a difference in anarea of the conductive layer per unit area between a central portion ofthe pattern region and a peripheral portion of the pattern region. Forexample, the inventor of the present disclosure recognized that the areaof the conductive layer is different between the entire metal region andthe patterned metal region. Details thereof will be described withreference to FIG. 2 through FIG. 4.

FIG. 2 illustrates an electroplating apparatus according to anembodiment of the present disclosure.

FIG. 2 illustrates a horizontal electroplating apparatus as an example.

With reference to FIG. 2, an electroplating apparatus 500 according toan embodiment of the present disclosure includes the substrate 110, astage 120, a cathode 140, an anode 190, a plating bath 130, and a spraynozzle 160. The electroplating apparatus 500 further includes a driverconfigured to move the anode 190 in the X-axis direction, a platingsolution 180, a power supply unit, and a controller.

The plating bath 130 provides an inside space where a plating solution180 is filled. The plating bath 130 may have a hexahedral shape with anopening toward an upper portion of the bath, but is not limited thereto.

The stage 120 may be a substrate configured to support the substrate110, which is a plating target object. The stage 120 may be disposed inthe plating bath 130 to maintain a consistent horizontality. Forexample, the stage 120 may be disposed in a horizontal direction(X-axis/Y-axis direction). Further, the stage 120 may be disposed suchthat a surface of the substrate 110 on the stage 120 is parallel to asurface of the plating solution 180. FIG. 2 illustrates that the surfaceof the plating solution 180 is fluid to indicate that the platingsolution 180 is liquid, but the surface of the plating solution 180 maybe substantially parallel to the bottom surface of the plating bath 130.

The stage 120 may have a plurality of rod-shaped stages 120 spaced apartfrom each other in a specific direction. For example, the stage 120includes a plurality of rod-shaped stages extended in the Y-axisdirection, and the plurality of rod-shaped stages may be disposedparallel and spaced apart in the X-axis direction. However, the presentdisclosure is not limited thereto. For example, the stage 120 may beformed into a mesh shape or a plate shape.

The substrate 110 is a plating target object, and a plating layer isformed on the surface of the substrate 110 by the electroplatingapparatus 500 according to an embodiment of the present disclosure. Forexample, a seed pattern as a seed during a plating process is formed ofa conductive material on the substrate 110. The substrate 110 includingthe seed pattern thereon is disposed on the stage 120. The substrate 110is disposed in a horizontal direction in the plating bath 130. Thus,when the plating bath 130 is filled with the plating solution 180, thesurface of the substrate 110 may be disposed substantially parallel tothe surface of the plating solution 180. The substrate 110 may be aconductor or a non-conductor, but is not limited thereto. Herein, it hasbeen described that the substrate 110 and the seed pattern are separatecomponents, but the substrate 110 may include the seed pattern.

If a plating process is performed by the horizontal electroplatingmethod, it is possible to minimize the volume, e.g., occupied volume ofthe system. If in-line processes are used in a manufacturing process, amanufacturing target, e.g., a substrate, is moved in the horizontaldirection during the manufacturing process. Thus, if the electroplatingapparatus performs a plating process by the horizontal electroplatingmethod, the substrate being disposed in the horizontal direction may beloaded into the plating bath. After the plated substrate is unloadedfrom the plating bath, the substrate may be moved as it is to a cleaningdevice or equipment. Thus, in the electroplating apparatus, any devicefor rotating the substrate from the horizontal direction to the verticaldirection or vice versa is not required. Therefore, the volume of thesystem may be reduced. According to the vertical electroplating method,the plating bath needs to have a size more than double the lengthwisedimension of the substrate. However, according to the horizontalelectroplating method, the plating bath 130 may have a size much smallerthan the double of the size of the substrate 110. Thus, in theelectroplating apparatus, the size of the plating bath 130 may bereduced to minimize the volume of the system.

The cathode 140 is disposed on both sides of the substrate 110 to applya current to the substrate 110. For example, the cathode 140 may apply acurrent to the seed pattern disposed on the substrate 110. Thus, aplating layer may be formed on the surface of the substrate 110 by theflow of electricity between the cathode 140 and the anode 190. Thecathode 140 may be disposed in the plating bath 130 and may be incontact with both sides of the substrate 110. Further, the cathode 140on the both sides of the substrate 110 may also fix the substrate 110 soas not to move. For example, the cathode 140 may also be configured as aclamp to grasp both sides of the substrate 110, but is not limitedthereto. If the substrate 110 can be fully fixed by the cathode 140, thestage 120 may not be provided.

The anode 190 is above the substrate 110, the anode 190 is spaced apartfrom the substrate 110, and applies a current to the substrate 110. Theanode 190 may be configured to move in the X-axis direction by thedriver.

The spray nozzle 160 sprays the plating solution 180 downwards towardthe substrate 110. The spray nozzle 160 may be disposed adjacent to theanode 190. The spray nozzle 160 may be combined with the anode 190 andmoved with the anode 190 in the X-axis direction. The spray nozzle 160supplies the plating solution 180 from an upper portion of the substrate110. Thus, the spray nozzle 160 can support the circulation of theplating solution 180 in the plating bath 130 and maintain a constantconcentration of the plating solution 180. The spray nozzle 160 mayinclude a plurality of spray nozzles in the Y-axis direction along thesurface of the substrate 110. Because the plurality of spray nozzles 160is used, the plating solution 180 may be rapidly supplied whenelectroplating is performed. Further, the spray nozzle 160 may bedisposed on only one surface or on both surfaces of the substrate 110based on the X-axis direction that is the movement direction of theanode 190. Further, the spray nozzle 160 may be rotatable withadjustable spraying direction and angle.

The plating solution 180 may fill in the plating bath 130. The powersupply unit is electrically connected to the cathode 140 and the anode190 and applies a current. For example, the power supply unit may applya voltage to the cathode 140 and the anode 190 to allow a constantcurrent to flow between the cathode 140 and the anode 190. A mask whichis a product manufactured by using the electroplating apparatus and theelectroplating method according to an embodiment of the presentdisclosure may be used to deposit an organic layer in a heatedenvironment instead of at a room temperature. The mask may be formed of,e.g., Invar or the like, but is not limited thereto. If theelectroplating apparatus uses Invar for plating, the plating solution180 may be a mixture solution. The mixture solution may be composed ofanhydrous nickel sulfate (NiSO₄), nickel ions using nickel chloride(NiCl₂) or the like, an iron ion source using anhydrous iron sulfate(FeSO₄) or the like, a pH regulator such as boric acid, polish, a stressreliever, and a stabilizer, etc. However, the present disclosure is notlimited thereto. Herein, it is assumed that the plating layer is formedof Invar, but a material of the plating layer is not limited thereto.

The power supply unit may apply a constant voltage such as a directcurrent (DC) voltage to the anode 190 and apply an alternating current(AC) voltage to the cathode 140. Herein, the AC voltage may have variouswaveforms such as a sine wave, a pulse wave, or a triangle wave, but isnot limited thereto.

The controller is connected to the power supply unit and controlscurrents applied from the power supply unit to the cathode 140 and theanode 190.

Therefore, the cathode 140 may apply a current to the seed pattern onthe substrate 110. Thus, a plating layer may be formed on the surface ofthe substrate 110 by the flow of electricity between the cathode 140 andthe anode 190. A plating layer adjacent to the cathode 140 is increasedin thickness because the current density is increased. Further, aplating layer in a central portion of a cell region distant from thecathode is decreased in thickness because the current density isdecreased. The horizontal electroplating method has been described as anexample. Even in the vertical electroplating method, there may be adifference in an area of plating caused by a difference in currentdensity. Details thereof will be described with reference to FIG. 3Athrough FIG. 3C and FIG. 4.

FIG. 3A through FIG. 3C are provided to explain a difference inthickness of a plating layer according to an embodiment of the presentdisclosure.

As shown in FIG. 3A, the cathode 140 may be disposed on upper and lowerportions of the substrate 110 and a plating process may be performed.FIG. 3B illustrates the thickness of a plating layer indicated by arrowa-a′ in FIG. 3A. FIG. 3C illustrates the thickness of a plating layerindicated by arrow b-b′ in FIG. 3A. In FIG. 3B and FIG. 3C, a referencethickness of the plating layer is, for example, 10 μm. However, thepresent disclosure is not limited thereto. In FIG. 3B and FIG. 3C, thereference thickness of 10 μm is denoted as t10, and a lower value meansa smaller thickness based on t10.

With reference to FIG. 3B, the first plating layer 142 is formed on thefirst conductive layer 122 in a pattern region. The thickness of thefirst plating layer 142 in a central portion of the pattern region ist10, i.e., 10 μm, which is the reference thickness of the plating layer.The thickness of the first plating layer 142 in a peripheral portion ofthe pattern region is t8. Herein, t8 is smaller than 10 μm, which is thereference thickness. Therefore, it can be seen that the plating layer inthe peripheral portion of the pattern region is smaller in thicknessthan the plating layer in the central portion of the pattern region.This is because the area of the plating layer per unit area is greaterin the peripheral portion of the pattern region than in the centralportion during a plating process, and, thus, the thickness of theplating layer in the peripheral portion is decreased.

With reference to FIG. 3C, the first plating layer 142 is formed on thefirst conductive layer 122 in a pattern region. The thickness of thefirst plating layer 142 in a central portion of the pattern region ist7. The thickness of the first plating layer 142 in a peripheral portionof the pattern region is t5. It may be shown that the plating layer inthe peripheral portion of the pattern region is smaller in thicknessthan the plating layer in the central portion of the pattern region.This is because the area of the plating layer per unit area is greaterin the peripheral portion of the pattern region than in the centralportion during a plating process, and, thus, the thickness of theplating layer in the peripheral portion is decreased. By comparisonbetween the central portion of the pattern region in FIG. 3B and thecentral portion of the pattern region in FIG. 3C, it may be shown thatthe thickness of the plating layer is decreased from t10 as shown inFIG. 3B to t7 as shown in FIG. 3C. While the plating process isperformed, the region shown in FIG. 3B is adjacent to the cathode andthus has a low resistance and a high current density. Thus, thethickness of the plating layer may be increased. Further, the regionshown in FIG. 3C is distant from the cathode and has a high resistanceand a low current density. Thus, the thickness of the plating layer isdecreased. By comparison between the peripheral portion of the patternregion in FIG. 3B and the peripheral portion of the pattern region inFIG. 3C, it may be shown that the thickness of the plating layer isdecreased from t8 as shown in FIG. 3B to t5 as shown in FIG. 3C. Whilethe plating process is performed, the region shown in FIG. 3B isadjacent to the cathode and thus has a low resistance and a high currentdensity. Thus, the thickness of the plating layer is increased. Further,the region shown in FIG. 3C is distant from the cathode and has a highresistance and a low current density. Thus, the thickness of the platinglayer is decreased.

FIG. 4 is a graph showing the measured thickness of a plating layeraccording to an embodiment of the present disclosure.

A vertical axis in FIG. 4 represents the thickness (μm) of a platinglayer, and a horizontal axis represents a region indicated by arrow C-C′in FIG. 1C. With reference to FIG. 4, it can be seen that the thicknessof the plating layer is changed from 9.9 μm to 8.4 μm. For example, thethickness of the plating layer in a central portion of the patternedmetal region or pattern region may be 9.9 μm and the thickness of theplating layer in a peripheral portion of the patterned metal region orpattern region may be 8.4 μm. For example, the first plating layer 142in the central portion of the pattern region may have a thickness of 9.9μm and the first plating layer 142 in the peripheral portion of thepattern region may have a thickness of 8.4 μm. It may be shown that theplating layer in the pattern region has a thickness difference of about15%. Further, it may be shown that the plating layer in a cell region ora single panel has a thickness difference of about 15%.

The thickness of a plating layer is affected by Amperes per SquareDeci-Meter (ASD), and a current density may be generated by a differencein resistance depending on the area of a plating layer and the positionof plating. As described above with reference to FIG. 3A through FIG.3C, during a plating process, the plating layer in the portion adjacentto the cathode is increased in thickness and the plating layer in theportion distant from the cathode is decreased in thickness. Further, theplating layer has a smaller thickness in the peripheral portion of thepattern region than in the central portion of the pattern region. Thisis because the area of the plating layer per unit area is greater in theperipheral portion of the pattern region than in the central portionduring a plating process, and, thus, the thickness of the plating layerin the peripheral portion is decreased. For example, if a platingprocess is performed with cathodes connected vertically, a regionadjacent to the cathodes may have a low resistance and a high currentdensity. Thus, the thickness of a plating layer may be increased.Further, a region distant from the cathodes may have a high resistanceand a low current density. Thus, the thickness of a plating layer may bedecreased. Accordingly, there may be a difference in thickness betweenan outer peripheral portion of a cell region with a high currentdensity, e.g., a second plating layer and a central portion with a lowcurrent density, e.g., a first plating layer. Therefore, the inventor ofthe present disclosure invented a mask having a new structure in whichthe area of a plating layer may be uniformly maintained according to theposition of plating. Details thereof will be described with reference toFIG. 5A through FIG. 9B.

FIG. 5A through FIG. 5C illustrate a mask according to anotherembodiment of the present disclosure.

As described above with reference to FIG. 1 through FIG. 4, to solve theproblem of difference in thickness of a plating layer for each platingposition, a finally manufactured mask may be welded to, e.g., a frameand a dummy pattern may be disposed around a plating layer. If the dummypattern is formed by laser processing or the like, the plating layer maybe deformed. If the plating layer is deformed, the position accuracy ofthe mask is changed, which may cause a defect in the mask. For example,the deformation of the mask and the change in position accuracy of themask may cause a change in position of a hole of the mask and a patternof the substrate deposited when an emission layer is deposited.Therefore, the emission layer cannot be deposited or may be partiallydeposited, or an unwanted emission layer may be deposited. To overcomethis problem, the inventor of the present disclosure conducted variousexperiments for making the thickness of a plating layer uniform. If thethickness of a plating layer is formed uniform after the plating layeris formed, a mask may have a defect due to the deformation of theplating layer. To solve this problem, the inventor of the presentdisclosure conducted various experiments for making the thickness of aconductive layer uniform. Herein, the conductive layer is a seed layerfor the plating layer. For example, a conductive layer is formed as aplating layer through a plating process. Thus, if the thickness of theconductive layer as a seed layer for the plating layer is formeduniform, the plating layer formed on the conductive layer may have auniform thickness. Accordingly, the inventor of the present disclosureinvented a mask having a new structure in which the thickness of aplating layer formed on a conductive layer can be uniformly maintainedby uniformly maintaining the thickness of the conductive layer, throughvarious experiments.

With reference to FIG. 5A through FIG. 5C, the plurality of cell regionsCELL corresponding to a plurality of electroluminescent displayapparatuses may be disposed on a substrate 210. Each cell region CELLmay include a plurality of openings 250 corresponding to a plurality ofpixels of an electroluminescent display apparatus.

The substrate 210 may be a substrate to support components formed on thesubstrate 210. The substrate 210 may be formed of an insulating materialto suppress the application of a current to the substrate 210.

A pattern region b and an auxiliary region c may be disposed on thesubstrate 210. The auxiliary region c may be disposed to make thethickness of a plating layer uniform. The plating layer is disposed on aconductive layer in the pattern region b. For example, the auxiliaryregion c may surround the pattern region b. The auxiliary region c mayrefer to the other region except the pattern region b. For example, theauxiliary region c may be a dummy region, but is not limited to theterm. The pattern region b may be an opening, but is not limited to theterm.

A first direction may be a horizontal direction (X-axis direction) and asecond direction may be a vertical direction (Y-axis direction). Theauxiliary region c may be disposed along the side in the first directionand the side in the second direction. For example, the auxiliary regionc may be disposed as extended along the first direction and the seconddirection to surround the plurality of cell regions CELL.

A second conductive layer 224 and a third conductive layer 226 may bedisposed in the auxiliary region c. For example, a region where thesecond conductive layer 224 and the third conductive layer 226 areformed may be the auxiliary region c. The second conductive layer 224 inthe auxiliary region c may be a conductive layer disposed to surroundthe plurality of cell regions CELL. For example, the second conductivelayer 224 may be disposed adjacent to the plurality of cell regions CELLalong the first direction. For example, the second conductive layer 224may be disposed along the first directional sides of the plurality ofcell regions CELL. For example, the second conductive layer 224 may bedisposed as extended along the first direction of the plurality of cellregions CELL.

The third conductive layer 226 of the auxiliary region c may be aconductive layer between the plurality of cell regions CELL. Forexample, the third conductive layer 226 may be disposed adjacent to theplurality of cell regions CELL along the second direction. For example,the third conductive layer 226 may be disposed along the seconddirectional sides of the plurality of cell regions CELL and may separatethe plurality of cell regions CELL. For example, the third conductivelayer 226 may be located between a plurality of cell regions CELLdisposed adjacent to each other in the first direction among theplurality of cell regions CELL. For example, the third conductive layer226 may be disposed along the second directional sides between aplurality of cell regions CELL disposed adjacent to each other in thefirst direction among the plurality of cell regions CELL.

A first conductive layer 222 may be disposed in the pattern region b.The pattern region b may include the openings 250 in the plurality ofcell regions CELL.

The first conductive layer 222 of the pattern region b may have a meshshape in the plurality of cell regions CELL. The first conductive layer222 may define the plurality of openings 250 corresponding to aplurality of pixels of an electroluminescent display apparatus in theplurality of cell regions CELL. The first conductive layer 222 may havea mesh shape in the plurality of cell regions CELL.

The first conductive layer 222, the second conductive layer 224, and thethird conductive layer 226 may be seed layers in a plating process to beperformed later. The first conductive layer 222, the second conductivelayer 224, and the third conductive layer 226 may be formed of the samematerial. The first conductive layer 222, the second conductive layer224, and the third conductive layer 226 may be formed as seed layers ofa metal material which is conductive to allow a current to flow. Forexample, the first conductive layer 222, the second conductive layer224, and the third conductive layer 226 may be formed of ITO onmolybdenum (ITO/Mo), copper (Cu) on a molybdenum-titanium alloy (MoTi),and ITO on copper (ITO/Cu). However, the present disclosure is notlimited thereto.

The first conductive layer 222, the second conductive layer 224, and thethird conductive layer 226 may be formed by sputtering, but is notlimited thereto. For example, the first conductive layer 222, the secondconductive layer 224, and the third conductive layer 226 may be formedby using various manufacturing processes such as rolling or the like.

FIG. 5B illustrates Area (1) of FIG. 5A. FIG. 5C illustrates Area (2) ofFIG. 5A. In FIG. 5B and FIG. 5C, the pattern region b is indicated by adotted line, and the auxiliary region c is the other region expect thepattern region b. A hole 33 h in the pattern region b and a hole 35 h inthe auxiliary region c are illustrated to distinguish a region where theconductive layers 222, 224, and 226 are not formed. A plating layer maybe formed on upper surfaces of the conductive layers in the patternregion b and the auxiliary region c through a plating process.

With reference to FIG. 5B, the pattern region b and the auxiliary regionc have the substantially same distance from the cathode in Area (1).Thus, there is no difference in thickness of a plating layer between thepattern region b and the auxiliary region c. However, as described abovewith reference to FIG. 3A through FIG. 3C and FIG. 4, there may be adifference in thickness of a plating layer between a central portion anda peripheral portion of the pattern region b in the X-axis direction orfirst direction. Therefore, the auxiliary region c is added to make theareas and current densities of the conductive layers in the centralportion and a peripheral portion of the pattern region b similar to eachother. Thus, a difference in thickness of the plating layer can bereduced. Because the auxiliary region c is added, the current densitymay be increased, and, thus, the thickness of the plating layer may beincreased. The conductive layers in the auxiliary region c have agreater width w2 in Area (1) than in Area (2), and, thus, the currentdensity may be less increased and the thickness of the plating layer maybe less increased. Therefore, the thickness of the plating layer in Area(1) may become similar to that of the plating layer in Area (2).

With reference to FIG. 5C, the conductive layers in the auxiliary regionc may have a smaller width w3 in Area (2) than in Area (1). Because Area(2) is distant from the cathode, the thickness of the plating layer maybe decreased. Therefore, to increase the current density, the area ofthe conductive layer may be reduced by narrowing the width of theconductive layer. In the wiring of the pattern region b, the hole 33 hwhere an organic material is deposited needs to have the same size inthe X-axis direction and/or the Y-axis direction. Therefore, the widthof the conductive layers and the thickness of the plating layer in thepattern region b need to be maintained uniform. In the case where thewidth of the conductive layers in the pattern region b is changed, evenif the thickness of the plating layer is uniform after plating, the sizeof the hole 33 h is changed. Therefore, a desired organic layer cannotbe deposited. Accordingly, the yield of manufacturing electroluminescentdisplay apparatuses may be decreased. Therefore, to improve theuniformity in thickness of the plating layer in the X-axis direction,the auxiliary region c is formed. Further, to improve the uniformity inthickness of the plating layer in the Y-axis direction, the width of theconductive layers in the auxiliary region c is adjusted. For example,the auxiliary region may be formed around the pattern region dependingon a difference in thickness of the conductive layers in the patternregion b. The ratios of the conductive layers in the central portion andthe peripheral portion of the pattern region may be similar or identicalto each other due to the auxiliary region. As another example, the widthof the auxiliary region can be regulated depending on the distance fromthe cathode. For example, the conductive layers in the auxiliary regiondistant from the cathode may have a smaller width and the conductivelayers in the auxiliary region near or adjacent to the cathode may havea greater width. Thus, the current density may be adjusted. The positionof the auxiliary region is not limited to the illustration in FIG. 5Athrough FIG. 5C.

An auxiliary region is formed according to the position of a conductivelayer or a plating layer on the conductive layer which is a seed layerfor the plating layer. Further, the width of the conductive layer in theauxiliary region is adjusted to uniformly maintain the thickness of theplating layer. Therefore, the position accuracy of the mask may beenhanced due to the uniform thickness of the plating layer.

FIG. 6A through FIG. 6F illustrate a process for forming an auxiliaryregion according to another embodiment of the present disclosure. Theauxiliary region may include the conductive layer 224 or 226.

With reference to FIG. 6A and FIG. 6B, a material 21 to be formed in anauxiliary region may be formed on the substrate 210. A photoresist 25may be formed on the material 21 to be formed in an auxiliary region anda conductive layer may be formed in the auxiliary region byphotolithography. The photoresist 25 may be a photosensitive resin whichis changed in solubility to a developer by light. A pattern may beobtained by performing exposure and development to the photoresist. Thephotoresist can be classified into a positive photoresist and a negativephotoresist. With the positive photoresist, a light exposure part isincreased in solubility to a developer by exposure to light and then thelight exposure part is removed by development, so that a pattern may beobtained. With the negative photoresist, a light exposure part isgreatly decreased in solubility to a developer by exposure to light andthen a non-light exposure part is removed by development, so that apattern may be obtained. As shown in FIG. 6C and FIG. 6D, light L isirradiated through a mask M and then development is performed. As shownin FIG. 6E and FIG. 6F, the material 21 formed on the auxiliary regionis etched and the photoresist 25 is stripped to form the conductivelayer 224 or 226 in the auxiliary region. The width of the conductivelayer 224 or 226 in the auxiliary region may be adjusted by controllingthe position of the mask M.

FIG. 7A through FIG. 7D are plan views and cross-sectional views for amethod of manufacturing a mask according to another embodiment of thepresent disclosure.

With reference to FIG. 7A and FIG. 7B, the pattern region b and theauxiliary region c may be disposed on the substrate 210.

The first conductive layer 222, the second conductive layer 224, and thethird conductive layer 226 may be formed on the substrate 210. Forexample, the first conductive layer 222 may be formed in the patternregion b. For example, the second conductive layer 224 and the thirdconductive layer 226 may be formed in the auxiliary region c. The firstconductive layer 222, the second conductive layer 224, and the thirdconductive layer 226 may be seed layers in a plating process to beperformed later. For example, the first conductive layer 222, the secondconductive layer 224, and the third conductive layer 226 may be formedas plating layers in a plating process to be performed later. The firstconductive layer 222, the second conductive layer 224, and the thirdconductive layer 226 may be formed of the same material. The firstconductive layer 222, the second conductive layer 224, and the thirdconductive layer 226 may be formed as seed layers of a metal materialwhich is conductive to allow a current to flow. For example, the firstconductive layer 222, the second conductive layer 224, and the thirdconductive layer 226 may be formed of ITO on molybdenum (ITO/Mo), copper(Cu) on a molybdenum-titanium alloy (MoTi), and ITO on copper (ITO/Cu).However, the present disclosure is not limited thereto.

With reference to FIG. 7C and FIG. 7D, a plating process is performedusing the first conductive layer 222, the second conductive layer 224,and the third conductive layer 226 as seed layers. Thus, a first platinglayer 242, a second plating layer 244, and a third plating layer 246 areformed.

A plating process for forming the first plating layer 242, the secondplating layer 244, and the third plating layer 246 on the firstconductive layer 222, the second conductive layer 224, and the thirdconductive layer 226 is performed. The first plating layer 242, thesecond plating layer 244, and the third plating layer 246 may be formedof the same material. Any plating method can be employed freelyaccording to a design as long as it can form the first plating layer242, the second plating layer 244, and the third plating layer 246 of ametal material. In the method of manufacturing a mask according to anembodiment of the present disclosure, an electroplating method which isa wet plating method may be employed. For example, the electroplatingmethod may include a vertical electroplating method in which plating isperformed in a state where the substrate 210 including the firstconductive layer 222, the second conductive layer 224, and the thirdconductive layer 226 is disposed vertically in a plating bath. Theelectroplating method may also include a horizontal electroplatingmethod in which plating is performed in a state where the substrate 210including the first conductive layer 222, the second conductive layer224, and the third conductive layer 226 is disposed horizontally in aplating bath.

In the plating process using the electroplating method, a current isapplied to the first conductive layer 222, the second conductive layer224, and the third conductive layer 226 as seed layers. When a currentflows in the first conductive layer 222, the second conductive layer224, and the third conductive layer 226, the first plating layer 242,the second plating layer 244, and the third plating layer 246 may beformed on the surfaces of the first conductive layer 222, the secondconductive layer 224, and the third conductive layer 226.

For example, the first plating layer 242 may be formed on the firstconductive layer 222 and the second plating layer 244 may be formed onthe second conductive layer 224. Further, the third plating layer 246may be formed on the third conductive layer 226. The first plating layer242, the second plating layer 244, and the third plating layer 246 areplated to surround the side surfaces of the first conductive layer 222,the second conductive layer 224, and the third conductive layer 226.Thus, an opening between the first plating layers 242 may have a smallersize than the opening 250 between the first conductive layers 222.

The substrate 210, the first conductive layer 222, the second conductivelayer 224, and the third conductive layer 226 are separated from thefirst plating layer 242, the second plating layer 244, and the thirdplating layer 246. For example, the first plating layer 242, the secondplating layer 244, and the third plating layer 246 may be separated fromthe substrate 210, the first conductive layer 222, the second conductivelayer 224, and the third conductive layer 226.

Then, the first plating layer 242, the second plating layer 244, and thethird plating layer 246 separated from the substrate 210, the firstconductive layer 222, the second conductive layer 224, and the thirdconductive layer 226 are welded to a frame. For example, the separatedplating layers may be welded to the frame after extension, e.g.,four-sided extension. The plating layers 242, 244, and 246 welded to theframe may be used as a mask 200 according to an embodiment of thepresent disclosure.

As another example, the substrate, the first plating layer 242, thesecond plating layer 244, and the third plating layer 246 may be weldedto a frame and then, the substrate may be removed. The resultant productmay be used as the mask 200 according to another embodiment of thepresent disclosure.

As another example, the first plating layer 242, the second platinglayer 244, and the third plating layer 246 from which the firstconductive layer 222, the second conductive layer 224, and the thirdconductive layer 226 have been separated before being welded to a framemay be used as the mask 200 according to yet another embodiment of thepresent disclosure.

FIG. 8A and FIG. 8B show the measured thickness of a plating layeraccording to another embodiment of the present disclosure.

FIG. 8A shows the measured thickness of a plating layer taken along aline H-H′ in FIG. 8B when applied as shown in FIG. 5A through FIG. 5C.

With reference to FIG. 8A and FIG. 8B, the thickness of a plating layerwas measured from three points in each of five cell regions. Forexample, the thickness of the plating layer was measured from threepoints in FIG. 8B, i.e., P1, P2, and P3. With reference to FIG. 8A, itcan be seen that the plating layer in the cell region has a thicknessdifference of less than 5%. For example, it can be seen that the platinglayer has a thickness difference of less than 5% between the centralportion and the peripheral portion of the pattern region. For example,the thickness difference of the plating layer is reduced by 10% or morecompared to that of FIG. 4. Therefore, it may be shown that thethickness of the plating layer may be maintained uniformly by theauxiliary region. Thus, the thickness of the plating layer throughoutthe entire substrate may be maintained uniformly.

FIG. 9A shows the measured thickness of a plating layer taken alonglines I1-I1′, I2-I2′, I3-I3′, I4-I4′ and I5-I5′ in FIG. 9B when appliedas shown in FIG. 5A through FIG. 5C.

With reference to FIG. 9A and FIG. 9B, the thickness of a plating layerwas measured from three points in each of five cell regions. Forexample, the thickness of the plating layer was measured from threepoints in FIG. 9B, i.e., P1, P2, and P3. With reference to FIG. 9A, itcan be seen that the plating layer in the cell region has a thicknessdifference of less than 7%. For example, it can be seen that the platinglayer has a thickness difference of less than 7% between the centralportion and the upper and lower portions of the pattern region. Forexample, the thickness difference of the plating layer is reduced by 8%or more compared to that of FIG. 4. Therefore, it may be shown that thethickness of the plating layer may be maintained uniformly by theauxiliary region. Thus, the thickness of the plating layer throughoutthe entire substrate may be maintained uniformly.

The thickness of the plating layer may be measured using a microscope,an X-ray fluorescence (XRF) analyzer, a focused ion beam (FIB)-scanningelectron microscope (SEM), or the like. However, the present disclosureis not limited thereto. When the thickness of the plating layer ismeasured using a microscope, the length or thickness of the platinglayer disposed on the substrate can be measured. If the substrate isformed of glass, it is easy to distinguish the conductive layer and theplating layer. Therefore, it is possible to measure the thickness of theplating layer using the microscope. The thickness of the plating layercan be measured using the microscope as shown in FIG. 3B and FIG. 3C.FIG. 3B and FIG. 3C illustrate, e.g., the vertical thickness of theplating layer formed on the conductive layer. However, the presentdisclosure is not limited thereto. For example, the horizontal thicknessof the plating layer formed on the conductive layer can also bemeasured. The thickness of the plating layer in a non-pattern region ismeasured using an XRF analyzer. The thickness of the plating layer canbe measured by inputting and reflecting an X-ray wavelength anddetecting a change in wavelength at a point where materials are changed.An FIB-SEM measures the thickness of the plating layer by cutting across-section of the plating layer. Herein, the thickness of the platinglayer was measured using the microscope and confirmed using the FIB-SEM.

FIG. 10 is a flowchart for manufacturing a mask according to anotherembodiment of the present disclosure.

With reference to FIG. 10, a pattern region and an auxiliary region areformed on a substrate (S110). A conductive layer may be formed in thepattern region and the auxiliary region. The auxiliary region surroundsthe pattern region. The auxiliary region may be formed by the methoddescribed above with reference to FIG. 6. Then, a substrate is disposedin a plating bath (S120). For example, the substrate including theconductive layer is disposed in the plating bath. Plating is performedto form a plating layer on the conductive layer in the pattern regionand the auxiliary region (S130). Then, the plating layer is welded to aframe (S140). Then, the plating layer is separated from the substrate tomanufacture a final mask (S150).

FIG. 11A through FIG. 11D illustrate a process for manufacturing a maskaccording to another embodiment of the present disclosure.

FIG. 11A through FIG. 11D illustrate a process for separating theplating layer from the substrate described above with reference to FIG.10.

With reference to FIG. 11A, a frame 50 is welded to an open metal masksheet 60. The frame 50 may be welded to the open metal mask sheet 60using a laser W or the like. However, the present disclosure is notlimited thereto. For example, the welding process may be performed usingvarious kinds of fiber lasers including a neodymium-yttrium aluminumgarnet (Nd-Yag) laser, but is not limited thereto. The second platinglayer 244 and the third plating layer 246 of the substrate 210 may becovered with the open metal mask sheet 60. The open metal mask sheet 60may be an open mask sheet, but is not limited to the term.

As shown in FIG. 11B, an open metal mask 70 prepared by welding theframe 50 to the open metal mask sheet 60, the first plating layer 242,the second plating layer 244, and the third plating layer 246 may bealigned. The aligning process may not be performed. The open metal mask70 may be an open mask or frame, but is not limited to an open mask orframe. The first plating layer 242, the second plating layer 244, andthe third plating layer 246 may be cut into a desired shape before beingaligned with the open metal mask 70. The first plating layer 242, thesecond plating layer 244, and the third plating layer 246 may be formedin a desired region by the cutting process. After the cutting process,the first plating layer 242, the second plating layer 244, and the thirdplating layer 246 may be aligned with the open metal mask 70.

As shown in FIG. 11C, the first plating layer 242, the second platinglayer 244, and the third plating layer 246 are welded to the open metalmask 70 using a laser W or the like. For example, the welding processmay be performed using various kinds of fiber lasers including aneodymium-yttrium aluminum garnet (Nd-Yag) laser, but is not limitedthereto. As another example, as described above with reference to FIG.11B, after the cutting process, the first plating layer 242, the secondplating layer 244, and the third plating layer 246 may be welded to theopen metal mask 70 using a laser or the like.

As shown in FIG. 11D, the substrate 210 may be reversed in a directionindicated by an arrow and then removed to manufacture a mask includingthe first plating layer 242, the second plating layer 244, and the thirdplating layer 246. As another example, the substrate may be removedwithout being reversed to manufacture a mask.

An FMM mask may be manufactured in the form of a plurality of dividedsticks. These sticks may be extended to a small thickness and welded toa frame. For example, the FMM mask may be manufactured by separating aplating layer from a substrate and then extending and welding theplating layer. In this case, if a mask is thin, slip phenomenon occursbetween adjacent sticks when the mask is extended. If the slipphenomenon occurs, a high-precision mask cannot be manufactured.Further, since the mask needs to be extended and welded, it takes 24hours or more to manufacture a mask for scattering. Therefore, byperforming an extension-free process by which a substrate and a frameare welded first and then the substrate is separated, it is possible tosuppress the deformation of a mask caused by extension and reducemanufacturing time for an FMM mask. However, the present disclosure isnot limited thereto. A mask can be manufactured in other ways.

As another example, the substrate 210, the first conductive layer 222,the second conductive layer 224, and the third conductive layer 226 maybe separated from the first plating layer 242, the second plating layer244, and the third plating layer 246. Then, the first plating layer 242,the second plating layer 244, and the third plating layer 246 may bewelded to the frame 50. The first plating layer 242, the second platinglayer 244, and the third plating layer 246 welded to the frame 50 may beused as a mask according to an embodiment of the present disclosure.

As another example, the substrate 210 including a plating layer may bewelded to an open metal mask prepared by welding a frame to an openmetal mask sheet. Then, the substrate 210 and a conductive layer may beseparated from the plating layer. The plating layer may be used as amask according to an embodiment of the present disclosure.

As another example, the first plating layer 242, the second platinglayer 244, and the third plating layer 246 from which the firstconductive layer 222, the second conductive layer 224, and the thirdconductive layer 226 have been separated before being welded to a framemay be used as a mask according to an embodiment of the presentdisclosure.

As another example, a substrate, the first plating layer 242, the secondplating layer 244, and the third plating layer 246 may be welded to aframe and then the substrate is removed. The first plating layer 242,the second plating layer 244, and the third plating layer 246 welded tothe frame may be used as the mask 200 according to another embodiment ofthe present disclosure.

The mask 200 according to an embodiment of the present disclosure mayinclude a plating layer and the frame 50. After the substrate 210 and aconductive layer are separated from the plating layer, the separatedplating layer may be welded to the frame 50. As another example, sinceit is difficult to weld the separated plating layer to the frame, anopen mask may be welded to the frame and the welded open mask may bewelded to the plating layer.

The frame 50 may be formed to a size suitable for the second platinglayer 244 and/or the third plating layer 246 to be disposed thereon. Inthis case, the frame 50 may be combined with the first plating layer242, the second plating layer 244, and the third plating layer 246 tosupport the first plating layer 242, the second plating layer 244, andthe third plating layer 246. As another example, the frame 50 may beformed to a size greater than the size suitable for the second platinglayer 244 and/or the third plating layer 246 to be disposed thereon. Forexample, the frame 50 may have a shape extended along the second platinglayer 244 and/or the third plating layer 246 and may be disposed to bein contact with a part of the second plating layer 244 and/or the thirdplating layer 246.

The frame 50 may be welded to the first plating layer 242, the secondplating layer 244, and the third plating layer 246 in a region for thesecond plating layer 244. As another example, the frame 50 may be weldedto the first plating layer 242, the second plating layer 244, and thethird plating layer 246 in regions for the second plating layer 244 andthe third plating layer 246, respectively. The welding process may beperformed using various kinds of fiber lasers including aneodymium-yttrium aluminum garnet (Nd-Yag) laser, but is not limitedthereto.

FIG. 12 illustrates a chamber where an organic material is sputtered ona display panel using the mask 200 shown in FIG. 7C.

As shown in FIG. 12, a sputtering unit 80 and a sputtering source 30 aredisposed in a vacuum chamber 90. The sputtering source 30 is under thesputtering unit 80. The sputtering unit 80 supported by a supportingshaft 81 includes a support 85, the mask 200 disposed on the support 85,and the substrate 210 which is disposed above the mask 200 and on whichan organic material is to be sputtered. The sputtering unit 80 furtherincludes a cooling plate 83 disposed above the substrate 210 to coolheat generated during the sputtering process, and a magnet plate 82disposed above the cooling plate 83 to suppress sagging of the mask 200.

A source 31 accommodated in the sputtering source 30 disposed on thebottom of the vacuum chamber 90 may be heated to be vaporized orsublimated. The source 31 vaporized or sublimated from the sputteringsource 30 may be selectively sputtered on the substrate 210 through aplurality of openings 270 formed in the mask 200 disposed under thesubstrate 210.

An embodiment of the present disclosure will be described below.

According to an embodiment of the present disclosure, a method ofmanufacturing a mask comprises forming a conductive layer on a patternregion and an auxiliary region around the pattern region of a substrate,placing the substrate including the conductive layer in a plating bath,forming a plating layer on the conductive layer, and separating thesubstrate and the conductive layer from the plating layer.

According to example embodiments of the present disclosure, theconductive layer on the pattern region and the auxiliary region of thesubstrate may be formed of a metal material.

According to some embodiments of the present disclosure, the forming theconductive layer on the pattern region and the auxiliary region of thesubstrate may include forming the conductive layer with different widthson the auxiliary region.

According to some embodiments of the present disclosure, the separatingthe substrate and the conductive layer from the plating layer mayinclude preparing an open mask by loading an open mask sheet onto aframe, welding the open mask to the substrate, and removing thesubstrate.

According to some embodiments of the present disclosure, the separatingthe substrate and the conductive layer from the plating layer mayinclude welding a frame to the substrate and removing the substrate.

According to some embodiments of the present disclosure, the method mayfurther comprise welding the plating layer to a frame after theseparating the substrate and the conductive layer from the platinglayer.

According to some embodiments of the present disclosure, the method mayfurther comprise welding the plating layer to a frame before theseparating the substrate and the conductive layer from the platinglayer.

According to some embodiments of the present disclosure, the forming theplating layer on the conductive layer may include electroplating inwhich a current is applied to an anode and a cathode or a chemicalplating in which a surface of the substrate is plated.

According to some embodiments of the present disclosure, the forming theplating layer on the conductive layer may include forming the platinglayer having different widths in the auxiliary region in a directionfrom the plating layer to the cathode.

According to some embodiments of the present disclosure, the patternregion may include a plurality of cell regions, and the conductive layerin the plurality of cell regions may define a plurality of openings.

According to some embodiments of the present disclosure, the conductivelayer in the auxiliary region may define a plurality of openings, and awidth between the openings in the auxiliary region adjacent to a cathodeon the substrate may be greater than a width between the openings in theauxiliary region distant from the cathode on the substrate.

According to some embodiments of the present disclosure, a width betweenthe openings in the pattern region may be greater than the width betweenthe openings in the auxiliary region distant from the cathode on thesubstrate and less than the width between the openings in the auxiliaryregion adjacent to the cathode on the substrate.

According to some embodiments of the present disclosure, the conductivelayer may be formed by sputtering or rolling.

According to some embodiments of the present disclosure, the conductivelayer may be formed of one of ITO on molybdenum (ITO/Mo), copper (Cu) ona molybdenum-titanium alloy (MoTi), and ITO on copper (ITO/Cu).

According to an embodiment of the present disclosure, a mask comprises apattern region in a plurality of cell regions, the pattern region havinga first plating layer, and an auxiliary region configured to be aroundthe pattern region, of the auxiliary region having a second platinglayer.

According to some embodiments of the present disclosure, the firstplating layer may be in a central portion and a peripheral portion ofthe pattern region, and the auxiliary region is configured to have athickness of the first plating layer in the central portion of thepattern region equal to that in the peripheral portion of the patternregion.

According to some embodiments of the present disclosure, a width of thefirst plating layer may be different from that of the second platinglayer.

According to some embodiments of the present disclosure, the auxiliaryregion may be in a region except the pattern region.

According to some embodiments of the present disclosure, the firstplating layer and the second plating layer may be formed of the samematerial.

According to an embodiment of the present disclosure, a mask comprises asubstrate including a plurality of cell regions, a first plating layerin the plurality of cell regions, a second plating layer in an outerperiphery of the plurality of cell regions and a third plating layerbetween the plurality of cell regions, wherein one of the second platinglayer and the third plating layer has the same thickness as the firstplating layer.

According to some embodiments of the present disclosure, the secondplating layer and the third plating layer may be configured to have thesame thickness of the first plating layer in the plurality of cellregions.

According to some embodiments of the present disclosure, one of thesecond plating layer and the third plating layer may be configured tohave different widths to have the same thickness of the first platinglayer in the plurality of cell regions.

According to some embodiments of the present disclosure, the firstplating layer, the second plating layer, and the third plating layer maybe formed of the same material.

It will be apparent to those skilled in the art that variousmodifications and variations may be made in the present disclosurewithout departing from the technical idea or scope of the disclosure.Thus, it may be intended that embodiments of the present disclosurecover the modifications and variations of the disclosure provided theycome within the scope of the appended claims and their equivalents.

The various embodiments described above can be combined to providefurther embodiments. These and other changes can be made to theembodiments in light of the above-detailed description. In general, inthe following claims, the terms used should not be construed to limitthe claims to the specific embodiments disclosed in the specificationand the claims, but should be construed to include all possibleembodiments along with the full scope of equivalents to which suchclaims are entitled. Accordingly, the claims are not limited by thedisclosure.

1. A method of manufacturing a mask, comprising: forming a conductivelayer on a pattern region and an auxiliary region around the patternregion of a substrate; placing the substrate including the conductivelayer in a plating bath; forming a plating layer on the conductivelayer; and separating the substrate and the conductive layer from theplating layer.
 2. The method of manufacturing the mask of claim 1,wherein the conductive layer on the pattern region and the auxiliaryregion of the substrate is formed of a metal material.
 3. The method ofmanufacturing the mask of claim 1, wherein forming the conductive layeron the pattern region and the auxiliary region of the substrate includesforming the conductive layer having different widths on the auxiliaryregion.
 4. The method of manufacturing the mask of claim 1, whereinseparating the substrate and the conductive layer from the plating layerincludes: preparing an open mask by loading an open mask sheet onto aframe; welding the open mask to the substrate; and removing thesubstrate.
 5. The method of manufacturing the mask of claim 1, whereinseparating the substrate and the conductive layer from the plating layerincludes: welding a frame to the substrate; and removing the substrate.6. The method of manufacturing the mask of claim 1, further comprising:welding the plating layer to a frame after separating the substrate andthe conductive layer from the plating layer.
 7. The method ofmanufacturing the mask of claim 1, further comprising: welding theplating layer to a frame before the separating the substrate and theconductive layer from the plating layer.
 8. The method of manufacturingthe mask of claim 1, wherein the forming the plating layer on theconductive layer includes electroplating in which a current applied toan anode and a cathode or a chemical plating in which a surface of thesubstrate is plated.
 9. The method of manufacturing the mask of claim 7,wherein forming the plating layer on the conductive layer includesforming the plating layer having different widths in the auxiliaryregion in a direction extending from the plating layer to the cathode.10. The method of manufacturing the mask of claim 1, wherein the patternregion includes a plurality of cell regions, and the conductive layer inthe plurality of cell regions defines a plurality of openings.
 11. Themethod of manufacturing the mask of claim 10, wherein the conductivelayer in the auxiliary region defines a plurality of openings, and awidth between the openings in the auxiliary region adjacent to a cathodeon the substrate is greater than a width between the openings in theauxiliary region distant from the cathode on the substrate.
 12. Themethod of manufacturing the mask of claim 11, wherein a width betweenthe openings in the pattern region is greater than the width between theopenings in the auxiliary region distant from the cathode on thesubstrate and less than the width between the openings in the auxiliaryregion adjacent to the cathode on the substrate.
 13. The method ofmanufacturing the mask of claim 1, wherein the conductive layer isformed by sputtering or rolling.
 14. The method of manufacturing themask of claim 1, wherein the conductive layer is formed of ITO onmolybdenum (ITO/Mo), copper (Cu) on a molybdenum-titanium alloy (MoTi),or ITO on copper (ITO/Cu).
 15. A mask, comprising: a pattern region in aplurality of cell regions, the pattern region having a first platinglayer; and an auxiliary region configured to be around the patternregion, the auxiliary region having a second plating layer.
 16. The maskof claim 15, wherein: the first plating layer is in a central portionand a peripheral portion of the pattern region, and the auxiliary regionis configured to have a thickness of the first plating layer in thecentral portion of the pattern region that is equal to a thickness inthe peripheral portion of the pattern region.
 17. The mask of claim 15,wherein a width of the first plating layer is different from a width ofthe second plating layer.
 18. The mask of claim 15, wherein theauxiliary region is a region other than the pattern region.
 19. The maskof claim 15, wherein the first plating layer and the second platinglayer are formed of the same material.
 20. A mask, comprising: asubstrate including a plurality of cell regions; a first plating layerin the plurality of cell regions; a second plating layer in an outerperiphery of the plurality of cell regions; and a third plating layerbetween the plurality of cell regions, one of the second plating layerand the third plating layer having a same thickness as a thickness ofthe first plating layer.
 21. The mask of claim 20, wherein the secondplating layer and the third plating layer are configured to have thesame thickness as the first plating layer in the plurality of cellregions.
 22. The mask of claim 20, wherein one of the second platinglayer and the third plating layer is configured to have different widthsand to have the same thickness of the first plating layer in theplurality of cell regions.
 23. The mask of claim 20, wherein the firstplating layer, the second plating layer, and the third plating layer areformed of the same material.